Compact Modeling

	Nanotech 2004 Vol. 2 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 3: Compact Modeling
-	Technology Limits and Compact Model for SiGe Scaled FETs
	R.W. Dutton and C-H Choi
	Stanford, US
-	Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects
	Z. Yu, D. Zhang and L. Tian
	Tsinghua University, CN
-	Recent Enhancements of MOS Model 11
	R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
	Philips Research Laboratories, NL
-	Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description
	M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
	Hiroshima University, JP
-	The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation
	X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
	University of California at Berkeley, US
-	Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
	X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
	Nanyang Technological University, SG
-	Modeling and Characterization of Wire Inductance for High Speed VLSI Design
	N.D. Arora and L. Song
	Cadence Design Systems, US
-	R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
	C. McAndrew
	Motorola, US
-	Advanced MOSFET Modeling for RF IC Design
	Y. Cheng
	Skyworks Solutions, US
-	RF Noise Models of MOSFETs- A Review
	S. Asgaran and M. Jamal Deen
	McMaster University, CA
-	Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors
	H. Tran and M. Schroter
	University of Technology Dresden, DE
-	Quasi-2D Compact Modeling for Double-Gate MOSFET
	M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
	Hong Kong University of Science and Technology, HK
-	Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs
	Q. Chen, L. Wang, R. Murali and J.D. Meindl
	Georgia Institute of Technology, US
-	Floating Gate Devices: Operation and Compact Modeling
	P. Pavan, L. Larcher and A. Marmiroli
	Università di Modena e Reggio Emilia, IT
-	A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach
	J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu
	University of California, Berkeley, US
-	An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach
	J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
	University of California, Berkeley, US
-	Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction
	J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
	University of California, Berkeley, US
-	Extraction of Extrinsic Series Resistance in RF CMOS
	M.S. Alam and G.A. Armstrong
	The Queen’s University of Belfast, UK
-	Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices
	H.C. Morris, M.M. DePass and H. Abebe
	San Jose State University, US
-	On the Correlations Between Model Process Parameters in Statistical Modeling
	J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar
	ON Semiconductor, CZ
-	A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology
	Y. Iino
	Silvaco Japan, JP
-	A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model
	S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
	National Nano Device Laboratories, TW
-	Characterization and Modeling of Silicon Tapered Inductors
	A.S. Peng, K.M. Chen, G.W. Huang, S.C. Wang, H.Y. Chen and C.Y. Chang
	National Nano Device Laboratories, TW
-	Improved Compact Model for Four-Terminal DG MOSFETs
	T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki and H. Koike
	National Institute of Advanced Industrial Science and Technology, JP
-	Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates
	J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki
	CNRS, FR
-	Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions
	Y. Mahotin and E. Lyumkis
	Integrated Systems Engineering, Inc., US
-	An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs
	J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre
	CNRS, FR
-	Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity
	S.B. Chiah, X. Zhou, K. Chandrasekaran, K-Y Lim, L. Chan and S. Chu
	Nanyang Technology University, SG
-	Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs
	K. Chandrasekaran, X. Zhou and S.B. Chiah
	Nanyang Technology University, SG
-	Predicting the SOI History Effect Using Compact Models
	M.H. Na, J.S. Watts, E.J. Nowak, R.Q. Williams and W.F. Clark
	IBM Corporation, US
-	New Capabilities for Verilog-A Implementations of Compact Device Models
	M. Mierzwinski, P. OHalloran, B. Troyanovsky, K. Mayaram and R.W. Dutton
	Tiburon Design Automation, US
-	Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET
	C. Galup-Montoro, M.C. Schneider, A. Arnaud and H. Klimach
	Universidade Federal de Santa Catarina, BR
ISBN:	0-9728422-8-4
Pages:	519
Hardcopy:	$150.00

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